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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2516 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 150 60 12 5 10 2.5 UNIT V V V A A A Emitter-base voltage Collector current Collector current-peak Base current Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2516 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ; IB=0;L=1mH 60 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.6 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 VCE=100V; VBE=-1.5V Ta=125ae VEB=10V ;IC=0 10 10 1 10 |I |I A A mA ICEX Collector cut-off current IEBO Emitter cut-off current |I A hFE-1 DC current gain IC=0.2 A ; VCE=5V hFE-2 Switching times IN DC current gain IC=3 A ; VCE=5V ton Turn-on time ts Storage time CHA E SEM NG OND IC TOR UC 40 200 0.5 |I s 2.5 |I s 40 IC=3A; IB1=-IB2=0.3A RL=17| ; VCC=50V tf Fall time 0.5 |I s hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2516 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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